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Single Crystal Silicon Carbide(SiC 6H/ 4H)

Silicon Carbide (SiC) is an advanced composite ceramic material,which is developed for applications in Aerospace, Semiconductor Lithography, and Astronomy.


Silicon Carbide(SiC)l has excellent thermal and mechanical stability.its physical and electronic properties make it the foremost semiconductor material for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices.


Silicon Carbide(SiC) crystal also can be optically polished and make it perfect for high performance light weight mirrors mounted on aircraft and spacecraft for imaging, laser targeting and communications applications.


Silicon carbide(SiC) is also used in commercial applications such as lightweight scan mirrors, semiconductor wafer handling, and reflective imaging systems.

Contact us for details!



SILICON CARBIDE MATERIAL PROPERTIES


Property

4H-SiC, Single Crystal

6H-SiC, Single Crystal

Lattice Parameters

a=3.076 Å c=10.053 Å

a=3.073 Å c=15.117 Å

Stacking Sequence

ABCB

ABCACB

Mohs Hardness

≈9.2

≈9.2

Density

3.21 g/cm3

3.21 g/cm3

Therm. Expansion Coefficient

4-5×10-6/K

4-5×10-6/K

Refraction Index @750nm

no = 2.61

ne = 2.66

no = 2.60

ne = 2.65

Dielectric Constant

c~9.66

c~9.66

Thermal Conductivity (N-type, 0.02 ohm.cm)

a~4.2 W/cm·K@298K

c~3.7 W/cm·K@298K

 

Thermal Conductivity (Semi-insulating)

a~4.9 W/cm·K@298K

c~3.9 W/cm·K@298K

a~4.6 W/cm·K@298K

c~3.2 W/cm·K@298K

Band-gap

3.23 eV

3.02 eV

Break-Down Electrical Field

3-5×106V/cm

3-5×106V/cm

Saturation Drift Velocity

2.0×105m/s

2.0×105m/s


Single Crystal Silicon Carbide(SiC 6H/ 4H)

Silicon Carbide (SiC) is an advanced composite ceramic material,which is developed for applications in Aerospace, Semiconductor Lithography, and Astronomy.


Silicon Carbide(SiC)l has excellent thermal and mechanical stability.its physical and electronic properties make it the foremost semiconductor material for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices.


Silicon Carbide(SiC) crystal also can be optically polished and make it perfect for high performance light weight mirrors mounted on aircraft and spacecraft for imaging, laser targeting and communications applications.


Silicon carbide(SiC) is also used in commercial applications such as lightweight scan mirrors, semiconductor wafer handling, and reflective imaging systems.

Contact us for details!



SILICON CARBIDE MATERIAL PROPERTIES


Property

4H-SiC, Single Crystal

6H-SiC, Single Crystal

Lattice Parameters

a=3.076 Å c=10.053 Å

a=3.073 Å c=15.117 Å

Stacking Sequence

ABCB

ABCACB

Mohs Hardness

≈9.2

≈9.2

Density

3.21 g/cm3

3.21 g/cm3

Therm. Expansion Coefficient

4-5×10-6/K

4-5×10-6/K

Refraction Index @750nm

no = 2.61

ne = 2.66

no = 2.60

ne = 2.65

Dielectric Constant

c~9.66

c~9.66

Thermal Conductivity (N-type, 0.02 ohm.cm)

a~4.2 W/cm·K@298K

c~3.7 W/cm·K@298K

 

Thermal Conductivity (Semi-insulating)

a~4.9 W/cm·K@298K

c~3.9 W/cm·K@298K

a~4.6 W/cm·K@298K

c~3.2 W/cm·K@298K

Band-gap

3.23 eV

3.02 eV

Break-Down Electrical Field

3-5×106V/cm

3-5×106V/cm

Saturation Drift Velocity

2.0×105m/s

2.0×105m/s