World Wide Suppliers of Industrial Sapphire&Ruby Precision Parts
Sapphire to Metal for Fluidic,Metrology&Medical Components
ISO 9001:2019 Mfg&Managment Certified Companies
-
Home
-
Products
- ALL products
- Sapphire Lens
- IPL Light Guides
- Sapphire Prism
- Zirconia Ceramic Parts
- Single Crystal Silicon Carbide(SiC 6H/ 4H)
- Optical Windows
- Optical Lens
- Sapphire Substrate&Wafer
- CMM Styli - Probe Tips
- Sapphire Orifice Jewel
- Sapphire Windows
- Jewel Bearing
- Sapphire Tube&Rods
- Balls&Semisphere
- Ruby Orifice Nozzle
- Sapphire&Ruby Assembly Parts
- Sapphire&Ruby Nozzle
- Custom Shaped Sapphire Parts
-
Material
-
Applications
-
About Us
-
Resources
-
Contact Us
-
- Sapphire Lens
- IPL Light Guides
- Sapphire Prism
- Zirconia Ceramic Parts
- Single Crystal Silicon Carbide(SiC 6H/ 4H)
- Optical Windows
- Optical Lens
- Sapphire Substrate&Wafer
- CMM Styli - Probe Tips
- Sapphire Orifice Jewel
- Sapphire Windows
- Jewel Bearing
- Sapphire Tube&Rods
- Balls&Semisphere
- Ruby Orifice Nozzle
- Sapphire&Ruby Assembly Parts
- Sapphire&Ruby Nozzle
- Custom Shaped Sapphire Parts
Single Crystal Silicon Carbide(SiC 6H/ 4H)
Silicon Carbide (SiC) is an advanced composite ceramic material, which is developed for applications in Aerospace, Semiconductor Lithography, and Astronomy.
Silicon Carbide(SiC)l has excellent thermal and mechanical stability. its physical and electronic properties make it the foremost semiconductor material for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices.
Silicon Carbide(SiC) crystal also can be optically polished and make it perfect for high performance light weight mirrors mounted on aircraft and spacecraft for imaging, laser targeting and communications applications.
Silicon carbide(SiC) is also used in commercial applications such as lightweight scan mirrors, semiconductor wafer handling, and reflective imaging systems.
SILICON CARBIDE MATERIAL PROPERTIES
Property
4H-SiC, Single Crystal
6H-SiC, Single Crystal
a=3.076 Å c=10.053 Å
a=3.073 Å c=15.117 Å
Refraction Index @750nm
no = 2.61
ne = 2.66
no = 2.60
ne = 2.65
Dielectric Constant
c~9.66
c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)
a~4.2 W/cm·K@298K
c~3.7 W/cm·K@298K
Thermal Conductivity (Semi-insulating)
c~3.9 W/cm·K@298K
c~3.2 W/cm·K@298K
Band-gap
3.23 eV
3.02 eV
Break-Down Electrical Field
Saturation Drift Velocity
2.0×105m/s
2.0×105m/s
Lattice Parameters
Stacking Sequence
ABCB
ABCACB
Mohs Hardness
≈9.2
≈9.2
Density
3.21 g/cm3
3.21 g/cm3
Therm. Expansion Coefficient
4-5×10-6/K
4-5×10-6/K
a~4.9 W/cm·K@298K
a~4.6 W/cm·K@298K
3-5×106V/cm
3-5×106V/cm
Single Crystal Silicon Carbide(SiC 6H/ 4H)
Silicon Carbide (SiC) is an advanced composite ceramic material, which is developed for applications in Aerospace, Semiconductor Lithography, and Astronomy.
Silicon Carbide(SiC)l has excellent thermal and mechanical stability. its physical and electronic properties make it the foremost semiconductor material for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices.
Silicon Carbide(SiC) crystal also can be optically polished and make it perfect for high performance light weight mirrors mounted on aircraft and spacecraft for imaging, laser targeting and communications applications.
Silicon carbide(SiC) is also used in commercial applications such as lightweight scan mirrors, semiconductor wafer handling, and reflective imaging systems.
SILICON CARBIDE MATERIAL PROPERTIES
Property
4H-SiC, Single Crystal
6H-SiC, Single Crystal
a=3.076 Å c=10.053 Å
a=3.073 Å c=15.117 Å
Refraction Index @750nm
no = 2.61
ne = 2.66
no = 2.60
ne = 2.65
Dielectric Constant
c~9.66
c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)
a~4.2 W/cm·K@298K
c~3.7 W/cm·K@298K
Thermal Conductivity (Semi-insulating)
c~3.9 W/cm·K@298K
c~3.2 W/cm·K@298K
Band-gap
3.23 eV
3.02 eV
Break-Down Electrical Field
Saturation Drift Velocity
2.0×105m/s
2.0×105m/s
Lattice Parameters
Stacking Sequence
ABCB
ABCACB
Mohs Hardness
≈9.2
≈9.2
Density
3.21 g/cm3
3.21 g/cm3
Therm. Expansion Coefficient
4-5×10-6/K
4-5×10-6/K
a~4.9 W/cm·K@298K
a~4.6 W/cm·K@298K
3-5×106V/cm
3-5×106V/cm
-
Chonghong Industries(Microwork)Ltd.
1803,2006,Huachuang Building Honghuang 10th Road Jiangbei District
Chongqing China 400020
0086 023 67937146
0086 18623135040
sales@ch-microwork.com
13500373464